Topics
The 21st DRIP Conference will be divided into the following thematic sessions:
- Defects in Silicon and Group IV Semiconductors
- Defects in Wide-Bandgap Semiconductors (GaN, Ga₂O₃, and SiC)
- Defects in New Semiconductor Materials
- Defects in Nanometric Semiconductor Structures
- Methods for Characterizing and Imaging Defects