- Prof. Jose Coutinho
University of Aveiro, Portugal
Modeling of nitrogen displacements in GaN using first-principles methods with a connection to junction spectroscopy
- Dr. Beatriz Galiana
Physics Department, Carlos III University, Spain
Atomic-scale detection of local electric fields at rotational twin boundaries in III–V nanowires by DPC-STEM
- Dr. Martien Ilse den Hertog
Neel Institute, CNRS, France
TBA
- Dr. Anna Kaleta
Institute of Physics, Polish Academy of Sciences, Poland
TBA
- Prof. Xiaodong Pi
Zhejiang University, China
TBA
- Prof. Daniel Prochowicz
Institute of Physical Chemistry, Polish Academy of Sciences, Poland
Understanding and mitigating defects in lead halide perovskites for robust solar cells
- Prof. Balaji Raghothamachar
Stony Brook University, USA
On the origins of defects and their evolution in bulk and epitaxial 4H-SiC crystals
- Dr. Carsten Richter
Leibniz Institute for Crystal Growth, Germany
3D Characterization of Dislocation Development in Seeded Growth of AlN Bulk Crystals
- Dr. Takuo Sasaki
National Institutes for Quantum Science and Technology, Japan
Unveiling the Dynamics of III-Nitride Surfaces and Interfaces by In Situ Synchrotron XRD
- Prof. Filip Tuomisto
University of Helsinki, Finland
The wide variety of vacancy defects in β-Ga2O3
